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STGYA50H120DF2 Datasheet, Equivalent, IGBT.IGBT IGBT |
| Part | STGYA50H120DF2 |
|---|---|
| Description | IGBT |
| Feature | STGYA50H120DF2
Datasheet
Trench gate fie ld-stop, 1200 V, 50 A, high-speed H ser ies IGBT in a Max247 long leads package
TAB
1 23 TAB
1 2 3
Max247 long lead s
C(2, TAB)
G(1)
E(3)
NG1E3C2T
Fea tures
• Maximum junction temperature: TJ = 175 °C • 5 μs of short-circui t withstand time • Low VCE(sat) = 2. 1 V (typ. ) @ IC = 50 A • Tight paramet er distribution • Positive VCE(sat) t emperature coefficient • Low thermal resistance • Very fast recovery antip arallel diode Applications • UPS • Solar inverters • Welding • PFC Des cription This device is IGBT developed using an advanced proprietary trench g . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | STGYA50H120DF2 |
|---|---|
| Description | IGBT |
| Feature | STGYA50H120DF2
Datasheet
Trench gate fie ld-stop, 1200 V, 50 A, high-speed H ser ies IGBT in a Max247 long leads package
TAB
1 23 TAB
1 2 3
Max247 long lead s
C(2, TAB)
G(1)
E(3)
NG1E3C2T
Fea tures
• Maximum junction temperature: TJ = 175 °C • 5 μs of short-circui t withstand time • Low VCE(sat) = 2. 1 V (typ. ) @ IC = 50 A • Tight paramet er distribution • Positive VCE(sat) t emperature coefficient • Low thermal resistance • Very fast recovery antip arallel diode Applications • UPS • Solar inverters • Welding • PFC Des cription This device is IGBT developed using an advanced proprietary trench g . |
| Manufacture | STMicroelectronics |
| Datasheet |
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