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STG50M120F3D7 Dataheets PDF



Part Number STG50M120F3D7
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description IGBT
Datasheet STG50M120F3D7 DatasheetSTG50M120F3D7 Datasheet (PDF)

STG50M120F3D7 Datasheet Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing C G Features • Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient Applications E • Industrial motor control EGCD • Industrial drives • Solar inverters • Uninterruptable power supplies (UPS) Description This device is an IGBT developed using .

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