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STG50M120F3D7 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part STG50M120F3D7
Description IGBT
Feature STG50M120F3D7 Datasheet Trench gate fiel d-stop 1200 V, 50 A low-loss M series I GBT die in D7 packing C G Features Maximum junction temperature: TJ = 17 5 °C
• 10 μs of short-circuit withs tand time
• Low VCE(sat) = 1.
7 V (typ .
) @ IC = 50 A
• Tight parameter dist ribution
• Positive VCE(sat) temperat ure coefficient Applications E
• I ndustrial motor control EGCD
• Indu strial drives
• Solar inverters
• Uninterruptable power supplies (UPS) Description This device is an IGBT deve loped using an advanced proprietary tre nch gate fieldstop structure.
The devic e is part of the M series IGBTs, w .
Manufacture STMicroelectronics
Datasheet
Download STG50M120F3D7 Datasheet
Part STG50M120F3D7
Description IGBT
Feature STG50M120F3D7 Datasheet Trench gate fiel d-stop 1200 V, 50 A low-loss M series I GBT die in D7 packing C G Features Maximum junction temperature: TJ = 17 5 °C
• 10 μs of short-circuit withs tand time
• Low VCE(sat) = 1.
7 V (typ .
) @ IC = 50 A
• Tight parameter dist ribution
• Positive VCE(sat) temperat ure coefficient Applications E
• I ndustrial motor control EGCD
• Indu strial drives
• Solar inverters
• Uninterruptable power supplies (UPS) Description This device is an IGBT deve loped using an advanced proprietary tre nch gate fieldstop structure.
The devic e is part of the M series IGBTs, w .
Manufacture STMicroelectronics
Datasheet
Download STG50M120F3D7 Datasheet

STG50M120F3D7

STG50M120F3D7
STG50M120F3D7

STG50M120F3D7

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