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STG50M120F3D7 Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | STG50M120F3D7 |
|---|---|
| Description | IGBT |
| Feature | STG50M120F3D7
Datasheet
Trench gate fiel d-stop 1200 V, 50 A low-loss M series I GBT die in D7 packing
C G
Features
†¢ Maximum junction temperature: TJ = 17 5 °C • 10 μs of short-circuit withs tand time • Low VCE(sat) = 1. 7 V (typ . ) @ IC = 50 A • Tight parameter dist ribution • Positive VCE(sat) temperat ure coefficient Applications E • I ndustrial motor control EGCD • Indu strial drives • Solar inverters • Uninterruptable power supplies (UPS) Description This device is an IGBT deve loped using an advanced proprietary tre nch gate fieldstop structure. The devic e is part of the M series IGBTs, w . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | STG50M120F3D7 |
|---|---|
| Description | IGBT |
| Feature | STG50M120F3D7
Datasheet
Trench gate fiel d-stop 1200 V, 50 A low-loss M series I GBT die in D7 packing
C G
Features
†¢ Maximum junction temperature: TJ = 17 5 °C • 10 μs of short-circuit withs tand time • Low VCE(sat) = 1. 7 V (typ . ) @ IC = 50 A • Tight parameter dist ribution • Positive VCE(sat) temperat ure coefficient Applications E • I ndustrial motor control EGCD • Indu strial drives • Solar inverters • Uninterruptable power supplies (UPS) Description This device is an IGBT deve loped using an advanced proprietary tre nch gate fieldstop structure. The devic e is part of the M series IGBTs, w . |
| Manufacture | STMicroelectronics |
| Datasheet |
　
　
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