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ST36015 Datasheet, Equivalent, LDMOS transistor.RF power LDMOS transistor RF power LDMOS transistor |
　
　
　
| Part | ST36015 |
|---|---|
| Description | RF power LDMOS transistor |
| Feature | ST36015
Datasheet
20 W, 28 V, 0. 7 to 3. 6 GHz RF power LDMOS transistor 1 3 2 E 2 Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code Frequency VDD POUT Gain Efficiency ST36015 3450 MHz 28 V 20 W 12. 4 dB 42% • High efficiency and linear gain operations â €¢ Integrated ESD protection • Intern al input matching for ease of use • L arge positive and negative gate-source voltage range for improved class C oper ation • In compliance with the Europe an directive 2002/95/EC Applications â €¢ Telecom and wideband communication â €¢ Industrial, scientific an . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | ST36015 |
|---|---|
| Description | RF power LDMOS transistor |
| Feature | ST36015
Datasheet
20 W, 28 V, 0. 7 to 3. 6 GHz RF power LDMOS transistor 1 3 2 E 2 Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code Frequency VDD POUT Gain Efficiency ST36015 3450 MHz 28 V 20 W 12. 4 dB 42% • High efficiency and linear gain operations â €¢ Integrated ESD protection • Intern al input matching for ease of use • L arge positive and negative gate-source voltage range for improved class C oper ation • In compliance with the Europe an directive 2002/95/EC Applications â €¢ Telecom and wideband communication â €¢ Industrial, scientific an . |
| Manufacture | STMicroelectronics |
| Datasheet |
　
　
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