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STPS10L40CSF Dataheets PDF



Part Number STPS10L40CSF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description power Schottky rectifier
Datasheet STPS10L40CSF DatasheetSTPS10L40CSF Datasheet (PDF)

STPS10L40CSF Datasheet 40 V, 2 x 5 A low forward voltage power Schottky rectifier Features • Low profile design – 1.1mm package typical height • Wettable flanks for automatic visual inspection • Very low conduction losses • High forward surge current capability • ECOPACK2 compliant Applications • DC/DC converter • Stand by power • Oring • Polarity protection Description This 2 x 5 A, 40 V Schottky diode is suitable for power supply, especially for lighting power, as well as auxiliary power in se.

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STPS10L40CSF Datasheet 40 V, 2 x 5 A low forward voltage power Schottky rectifier Features • Low profile design – 1.1mm package typical height • Wettable flanks for automatic visual inspection • Very low conduction losses • High forward surge current capability • ECOPACK2 compliant Applications • DC/DC converter • Stand by power • Oring • Polarity protection Description This 2 x 5 A, 40 V Schottky diode is suitable for power supply, especially for lighting power, as well as auxiliary power in server or telecom SMPS. Packaged in PSMC (TO-277A), this STPS10L40CSF, dual diode device provides a high level of efficiency in a compact and flat package is ideal for oring function in server for instance. Product status link STPS10L40CSF Product summary IF(AV) 2x5A VRRM 40 V Tj (max.) 150 °C VF (typ.) 0.370 V DS13739 - Rev 1 - May 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPS10L40CSF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(AV) Average forward current, δ = 0.5 square wave Tc = 135 °C(1) Per diode Per device PARM Repetitive avalanche power tp = 10 µs Tj = 125 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature(2) 1. Value based on Rth(j-c)(max.). 2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Value Unit 40 V 5 A 10 165 W 120 A -65 to +175 °C +150 °C Symbol Rth(j-c) Table 2. Thermal resistance parameter Junction to case, per device Parameter Typ. value Unit PSMC (TO-277) 1.0 °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol IR(1) Parameter Reverse leakage current VF(2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% Test conditions Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C Tj = 125 °C IF = 5 A Tj = 25 °C Tj = 125 °C IF = 10 A Min. Typ. Max. Unit - 125 µA - 30 50 mA - 0.495 - 0.370 0.430 V - 0.600 - 0.505 0.590 To evaluate the conduction losses, use the following equation: P = 0.25 x IF(AV) + 0.036 x IF2(RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS13739 - Rev 1 page 2/9 STPS10L40CSF Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward current versus case temperature (δ = 0.5, per diode) IF(AV)(A) 25 20 15 10 5 T 0 δ=tp/T tp 0 25 50 Tc(°C) 75 100 125 150 Figure 2. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c) /Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse 0.1 0.0 1.E-04 1.E-03 1.E-02 1.E-01 t P(s) 1.E+00 Figure 3. Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(mA) 1.E+02 1.E+01 Tj = 125 °C Tj = 100 °C 1.E+00 Tj = 75 °C 1.E-01 1.E-02 Tj = 50 °C Tj = 25 °C 1.E-03 0 VR(V) 5 10 15 20 25 30 35 40 Figure 4. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 100 1 VR(V) 10 100 Figure 5. Forward voltage drop versus forward current (typical values, per diode) IF(A) 100.0 10.0 Tj = 25 °C Tj = 75 °C 1.0 Tj = 125 °C Tj = 150 °C VF(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Figure 6. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu= 70 µm) Rth(j-a) (°C/W) 120 Epoxy printed board FR4, copper thickness: 70 μm 100 PSMC (TO-277A) 80 60 40 20 SCu(cm²) 0 0 1 2 3 4 5 6 7 8 9 10 DS13739 - Rev 1 page 3/9 STPS10L40CSF Characteristics (curves) Figure 7. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) PARM (t p ) PARM(10 µs) 1 0.1 0.01 0.001 1 t p(µs) 10 100 1000 DS13739 - Rev 1 page 4/9 STPS10L40CSF Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 PSMC (TO-277A) package information • Epoxy meets UL94,V0 • Cooling method : by conduction (C) Figure 8. PSMC (TO-277A) package outline DS13739 - Rev 1 page 5/9 STPS10L40CSF PSMC (TO-277A) package information Table 4. PSMC (TO-277A) package mechanical data Dimensions.


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