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RF4L15400CB4 Datasheet, Equivalent, LDMOS transistor.RF Power LDMOS transistor RF Power LDMOS transistor |
　
　
　
| Part | RF4L15400CB4 |
|---|---|
| Description | RF Power LDMOS transistor |
| Feature | RF4L15400CB4
Datasheet
400 W, 40 V, 1. 2 to 1. 5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin C onnection 1 Drain A 2 Drain B 3 S ource (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VD D POUT Gain Efficiency RF4L15400CB4 1. 5 GHz 40 V 400 W 18. 5 dB 57% †¢ High efficiency and linear gain opera tions • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large posi tive and negative gate-source voltage r ange for improved class C operation • Excellent thermal stability, low HCI d rift • In compliance wit . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | RF4L15400CB4 |
|---|---|
| Description | RF Power LDMOS transistor |
| Feature | RF4L15400CB4
Datasheet
400 W, 40 V, 1. 2 to 1. 5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin C onnection 1 Drain A 2 Drain B 3 S ource (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VD D POUT Gain Efficiency RF4L15400CB4 1. 5 GHz 40 V 400 W 18. 5 dB 57% †¢ High efficiency and linear gain opera tions • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large posi tive and negative gate-source voltage r ange for improved class C operation • Excellent thermal stability, low HCI d rift • In compliance wit . |
| Manufacture | STMicroelectronics |
| Datasheet |
　
　
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