BC856AQC-Q

BC856xQC-Q series 65 V, 100 mA PNP general-purpose transistor Rev. 1 — 23 September 2021 Product data sheet 1. General description PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless SurfaceMounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number BC856AQC-Q BC856BQC-Q Package Nexperia SOT8009 JEDEC MO-340CA NPN complement: BC846AQC-Q BC846BQC-Q 2. Features and benefits High power dissipation capability Suitable for Automatic Optical Inspection (AOI) of solder joint Smaller footprint compared to conventional leaded SMD packages Low package height of 0.5 mm Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications General-purpose switching and amplification Space restricted applications 4. Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current ICM peak collector current single pulse; tp ≤ 1 ms hFE DC current gain BC856AQC-Q VCE = -5 V; IC = -2 mA BC856BQC-Q Min Typ Max Unit - - -65 V - - -100 mA - - -200 mA 125 - 250 220 - 475 Nexperia 5. Pinning information Table 3. Pinning Pin 1 2 3 Symbol B E C BC856xQC-Q series 65 V, 100 mA PNP general-purpose transistor Description base emitter collector Simplified outline 3 1 2 Transparent top view Graphic symbol C B E sym132 6. Ordering...