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BCV71-Q Dataheets PDF



Part Number BCV71-Q
Manufacturers nexperia
Logo nexperia
Description NPN transistors
Datasheet BCV71-Q DatasheetBCV71-Q Datasheet (PDF)

BCV71-Q NPN general purpose transistors 25 May 2022 Product data sheet 1. General description NPN transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 100 mA) • Low voltage (max. 60 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • General purpose switching and amplification. 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO coll.

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BCV71-Q NPN general purpose transistors 25 May 2022 Product data sheet 1. General description NPN transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 100 mA) • Low voltage (max. 60 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • General purpose switching and amplification. 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current hFE DC current gain Conditions open base VCE = 5 V; IC = 10 µA; Tamb = 25 °C VCE = 5 V; IC = 2 mA; Tamb = 25 °C Min Typ Max Unit - - 60 V - - - 90 110 - 100 mA 220 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline 3 1 2 SOT23 Graphic symbol C B E sym021 Nexperia BCV71-Q NPN general purpose transistors 6. Ordering information Table 3. Ordering information Type number Package Name BCV71-Q SOT23 Description plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Version SOT23 7. Marking Table 4. Marking codes Type number BCV71-Q [1] % = placeholder for manufacturing site code Marking code[1] K7% 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature open emitter open base open collector single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Min - - - - - - [1] - - -65 -65 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Max 80 60 5 100 200 200 250 150 150 150 Unit V V V mA mA mA mW °C °C °C 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient [1] Transistor mounted on an FR4 printed-circuit board. Min Typ Max Unit [1] - - 500 K/W BCV71-Q Product data sheet All information provided in this document is subject to legal disclaimers. 25 May 2022 © Nexperia B.V. 2022. All rights reserved 2/7 Nexperia BCV71-Q NPN general purpose transistors 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions ICBO collector-base cut-off current VCB = 20 V; IE = 0 A; Tamb = 25 °C VCB = 20 V; IE = 0 A; Tj = 100 °C IEBO emitter-base cut-off VEB = 5 V; IC = 0 A; Tamb = 25 °C current hFE VCEsat VBEsat VBE Cc fT NF DC current gain VCE = 5 V; IC = 10 µA; Tamb = 25 °C VCE = 5 V; IC = 2 mA; Tamb = 25 °C collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C base-emitter saturation IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C voltage IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 °C collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C noise figure VCE = 5 V; IC = 200 µA; RS = 2 kΩ; f = 1 MHz; B = 200 Hz; Tamb = 25 °C Min Typ Max Unit - - 100 nA - - 10 µA - - 100 nA - 90 - 110 - 220 - 120 250 mV - 210 - mV - 750 - mV - 850 - mV 550 - 700 mV - 2.5 - pF 100 - - MHz - - 10 dB 11. Test information Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 2.5 1.4 2.1 1.2 3.0 2.8 3 1.1 0.9 0.45 0.15 1 1.9 Dimensions in mm Fig. 1. Package outline SOT23 2 0.48 0.38 0.15 0.09 18-03-12 BCV71-Q Product data sheet All information provided in this document is subject to legal disclaimers. 25 May 2022 © Nexperia B.V. 2022. All rights reserved 3/7 Nexperia 13. Soldering 3.3 2.9 1.9 3 1.7 0.7 (3×) 0.5 (3×) 0.6 (3×) 1 Fig. 2. Reflow soldering footprint for SOT23 2.2 1.2 (2×) 1.4 (2×) 4.6 2.6 1.4 2.8 4.5 Fig. 3. Wave soldering footprint for SOT23 BCV71-Q NPN general purpose transistors 2 0.6 (3×) solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering sot023_fw BCV71-Q Product data sheet All information provided in this document is subject to legal disclaimers. 25 May 2022 © Nexperia B.V. 2022. All rights reserved 4/7 Nexperia 14. Revision history Table 8. Revision history Data sheet ID Release date BCV71-Q v.1 20220525 BCV71-Q NPN general purpose transistors Data sheet status Product data sheet Change.


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