H7N0203AB

H7N0203AB Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS (on) =2.4 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 123 G S REJ03G1119-0500 (Previous: ADE-208-1490C) Rev.5.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.5.00 Sep 07, 2005 page 1 of 7 H7N0203AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 2 EAR Note 2 Pch Note 3 θ ch-c Tch Tstg Value 20 ±20 90 360 90 20 40 100 1.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery ti...