H7N0308CF

H7N0308CF Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS (on) = 3.8 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 123 S REJ03G1123-0300 (Previous: ADE-208-1570A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain 3. Source Rev.3.00 Sep 07, 2005 page 1 of 3 H7N0308CF Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 θ ch-c θ ch-a Tch Tstg Value 30 ±20 60 240 60 30 4.17 62.5 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C/W °C/W °C °C Symbol V (BR) DSS V (BR) GSS IGS...