Silicon N-Channel Power MOSFET
HAT2016R
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate ...
Description
HAT2016R
Silicon N Channel Power MOS FET High Speed Power Switching
Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD
56 DD
87 65 1 234
2
4
G
G
S1 MOS1
S3 MOS2
REJ03G1156-1000 (Previous: ADE-208-438H)
Rev.10.00 Sep 07, 2005
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
Rev.10.00 Sep 07, 2005 page 1 of 7
HAT2016R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
30
VGSS
±20
Drain current Drain peak current
ID
6.5
ID (pulse) Note 1
52
Body-drain diode reverse drain current
IDR
6.5
Channel dissipation
Pch Note 2
2
Channel dissipation
Pch Note 3
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C) Unit
V V A A A W W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward v...
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