Silicon N-Channel Power MOSFET
HAT2022R
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate ...
Description
HAT2022R
Silicon N Channel Power MOS FET High Speed Power Switching
Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65
4
G
1234
5678 DDDD
SSS 123
REJ03G1158-1200 (Previous: ADE-208-440J)
Rev.12.00 Sep 07, 2005
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.12.00 Sep 07, 2005 page 1 of 6
HAT2022R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
30
VGSS
±20
Drain current Drain peak current
ID
11
ID (pulse) Note 1
88
Body-drain diode reverse drain current
IDR
11
Channel dissipation
Pch Note 2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C) Unit
V V A A A W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol V (BR) DSS V (BR) GSS
IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on)
tr t...
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