HAT2025R Datasheet PDF

HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching Features • High speed switching • Low on-resistance...

HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching Features High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1160-0500 (Previous: ADE-208-518C) Rev.5.00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.5.00 Sep 07, 2005 page 1 of 6 HAT2025R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID 8 ID (pulse) Note 1 64 Body-drain diode reverse drain current IDR 8 Channel dissipation Pch Note 2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Cos...