HAT2040R Datasheet PDF

HAT2040R Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance RDS (on) = 6.2 mΩ typ • Capable o...

HAT2040R Silicon N Channel Power MOS FET Power Switching Features Low on-resistance RDS (on) = 6.2 mΩ typ Capable of 4 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1168-0600 (Previous: ADE-208-565D) Rev.6.00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.6.00 Sep 07, 2005 page 1 of 4 HAT2040R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID ID (pulse) Note 1 15 120 Body-drain diode reverse drain current IDR 15 Channel dissipation Pch Note 2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test (Ta = 25°C) Symbol Min Typ Max Unit Test Conditions V (BR) DS...