Silicon N-Channel Power MOSFET
HAT2050T
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate ...
Description
HAT2050T
Silicon N Channel Power MOS FET High Speed Power Switching
Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
RENESAS Package code: PTSP0008JB-A (Package name: TSSOP-8 )
1
8
D
D
8765 1234
4
5
G
G
SS 23
MOS1
SS 67
MOS2
REJ03G1171-0300 (Previous: ADE-208-660A)
Rev.3.00 Sep 07, 2005
1, 8 2, 3, 6, 7 4, 5
Drain Source Gate
Rev.3.00 Sep 07, 2005 page 1 of 7
HAT2050T
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
100
VGSS
±20
Drain current Drain peak current
ID
1
ID (pulse) Note 1
4
Body-drain diode reverse drain current
IDR
1
Channel dissipation
Pch Note 2
1.0
Channel dissipation
Pch Note 3
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C) Unit
V V A A A W W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward ...
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