HAT1016R

HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1 234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1142-0700 (Previous: ADE-208-471E) Rev.7.00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.7.00 Sep 07, 2005 page 1 of 7 HAT1016R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS –30 VGSS ±20 Drain current Drain peak current ID ID (pulse) Note 1 –4.5 –36 Body-drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note 2 Pch Note 3 –4.5 2 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage...