HAT1021R Datasheet PDF

HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gat...

HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1 234 5678 DDDD SSS 123 REJ03G1144-0600 (Previous: ADE-208-475D) Rev.6.00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.6.00 Sep 07, 2005 page 1 of 6 HAT1021R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS –20 VGSS ±10 Drain current Drain peak current ID ID (pulse) Note 1 –5.5 –44 Body-drain diode reverse drain current Channel dissipation IDR Pch Note 2 –5.5 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr...