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HAT1043M Dataheets PDF



Part Number HAT1043M
Manufacturers Renesas
Logo Renesas
Description Silicon P-Channel Power MOSFET
Datasheet HAT1043M DatasheetHAT1043M Datasheet (PDF)

HAT1043M Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device can be driven from 3 V source Outline RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6) 4 5 6 3 3 G 2 1 REJ03G1151-0600 (Previous: ADE-208-754D) Rev.6.00 Sep 07, 2005 1 256 D DDD S 4 4 3 1, 2, 5, 6 Source Gate Drain Rev.6.00 Sep 07, 2005 page 1 of 6 HAT1043M Absolute Maximum Ratings Item Symbol Value Drain to sourc.

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HAT1043M Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device can be driven from 3 V source Outline RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6) 4 5 6 3 3 G 2 1 REJ03G1151-0600 (Previous: ADE-208-754D) Rev.6.00 Sep 07, 2005 1 256 D DDD S 4 4 3 1, 2, 5, 6 Source Gate Drain Rev.6.00 Sep 07, 2005 page 1 of 6 HAT1043M Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS –20 VGSS ±12 Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation ID ID (pulse) Note 1 IDR Note 2 Pch (pulse) Note 2 Pch (continuous) Note 3 –4.4 –17.6 –4.4 2.0 1.05 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C 3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C (Ta = 25°C) Unit V V A A A W W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min –20 — — –0.4 — — 4 — — — — — — — — — — — — Typ — — — — 55 85 7 750 310 220 11 2 3.5 15 100 85 100 –0.95 50 Max — ±0.1 –1 –1.4 65 110 — — — — — — — — — — — –1.23 — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = –10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = –20 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –3 A, VGS = –4.5 V Note 4 ID = –3 A, VGS = –2.5 V Note 4 ID = –3 A, VDS = –10 V Note 4 VDS = –10 V VGS = 0 f = 1 MHz VDD = –10 V VGS = –4.5 V ID = –4.4 A VGS = –4.5 V, ID = –3 A, RL = 3.3 Ω IF = –4.4 A, VGS = 0 IF = –4.4 A, VGS = 0 diF/dt = –20 A/µs Rev.6.00 Sep 07, 2005 page 2 of 6 HAT1043M Main Characteristics Power vs. Temperature Derating 2.0 Channel Dissipation Pch (W) 1.5 1.0 0.5 Drain Current ID (A) 0 0 50 100 150 200 Ambient Temperature Ta (°C) Test Condition: When using the alumina ceramic board (50 × 50 × 0.7 mm), (PW ≤ 5 s) Typical Output Characteristics –10 –10 V –4 V –8 –3 V –2.5 V –6 Pulse Test –2 V –4 –2 VGS = –1.5 V 0 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.5 Pulse Test –0.4 –0.3 –0.2 ID = –5 A –0.1 –2 A –1 A 0 0 –4 –8 –12 –16 –20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) Rev.6.00 Sep 07, 2005 page 3 of 6 Drain to Source on State Resistance RDS (on) (mΩ) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area –100 –30 10 µs –10 –3 –1 –0.3 –0.1 –0.03 OperaDtCioOnpienraPtWion=(1P0Wms 1 (1 ms shot) this area is limited by RDS (on) Ta = 25°C ≤ N5oste)5 1 shot pulse –0.01 –0.1 –0.3 –1 –3 –10 100 µs –30 –100 Drain to Source Voltage VDS (V) Note 5: When using the alumina ceramic board (50 × 50 × 0.7 mm) Typical Transfer Characteristics –10 VDS = –10 V Pulse Test –8 –6 –4 –2 Tc = –25°C 75°C 25°C 0 0 –1 –2 –3 –4 –5 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 500 200 100 VGS = –2.5 V 50 –4.5 V 20 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 Drain Current ID (A) HAT1043M Static Drain to Source on State Resistance RDS (on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 –1 A, –2 A 150 ID = –5 A 100 –2.5 V –5 A 50 0 –50 VGS = –4.5 V –1 A, –2 A 0 50 100 150 200 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 20 10 –0.1 –0.2 di / dt = 20 A / µs VGS = 0, Ta = 25°C –0.5 –1 –2 –5 –10 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 0 0 VDD = –5 V –10 V –10 –20 V –2 –20 VGS VDS –30 VDD = –5 V –10 V –20 V –40 ID = –4.4 A –50 0 4 8 12 16 Gate Charge Qg (nc) –4 –6 –8 –10 20 Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance |yfs| (S) Forward Trans.


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