DMN60H080DS

DMN60H080DS N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BVDSS 600V RDS(ON) 100Ω @ VGS = 10V Package SOT23 ID TA = +25°C 80mA Description This new generation uses advanced planar technology MOSFET, provides excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features  Low Input Capacitance  High BVDSS Rating for Power Application  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications  Motor controls  Backlighting  DC-DC converters  Power-management functions Mechanical Data  Package: SOT23  Package Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3  Terminal Connections: See Diagram  Weight: 0.008 grams (Approximate) SOT23 D D G ESD PROTECTED Top View Ordering Information (Note 4) Part Number DMN60H080DS-7 DMN60H080DS-13 Package SOT23 SOT23 G a t S e P Equivralent Circuit o t e c t i o n D i o d e G S T...