DatasheetsPDF.com

DMN3009SFGQ Dataheets PDF



Part Number DMN3009SFGQ
Manufacturers DIODES
Logo DIODES
Description N-CHANNEL MOSFET
Datasheet DMN3009SFGQ DatasheetDMN3009SFGQ Datasheet (PDF)

DMN3009SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(on) Max 5.5mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V ID Max TC = +25°C 45A 30A Features and Benefits • Low On-Resistance • Low Input Capacitance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The DMN3009SFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured.

  DMN3009SFGQ   DMN3009SFGQ



Document
DMN3009SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(on) Max 5.5mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V ID Max TC = +25°C 45A 30A Features and Benefits • Low On-Resistance • Low Input Capacitance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The DMN3009SFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: • Power Management Functions • DC-DC Converters • Batteries Mechanical Data • Case: PowerDI®3333-8 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See Diagram • Terminals: FinishMatte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (Approximate) PowerDI3333-8 S Pin 1 S S G D D D D Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN3009SFGQ-7 DMN3009SFGQ-13 Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information N09 PowerDI is a registered trademark of Diodes Incorporated. DMN3009SFGQ Document number: DS39775 Rev. 3 - 2 YYW W N09 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 21 = 2021) WW = Week Code (01 to 53) 1 of 7 www.diodes.com July 2021 © Diodes Incorporated DMN3009SFGQ Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current, VGS = 10V (Note 6) Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH TA = +25°C TA = +70°C TC = +25°C TC = +70°C Symbol VDSS VGSS ID ID IDM IS IAS EAS Value 30 ±20 16 13 45 35 80 20 33 55 Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.9 0.6 137 2.1 1.4 59 7.8 -55 to +150 Unit V V A A A A A mJ Unit W °C/W W °C/W °C/W °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tR tD(off) tF tRR QRR Min 30 — — 1 — — — — — — — — — — — — — — — — — Typ — — — 1.4 4.0 4.9 0.68 2,000 315 248 2.2 20 42 4.7 7.4 3.9 4.1 31 14.6 15 6 Max — 1 ±100 2.5 5.5 9 1 — — — — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = 250μA μA VDS = 24V, VGS = 0V nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250μA mΩ VGS = 10V, ID = 20A VGS = 4.5V, ID = 16A V VGS = 0V, IS = 1A pF pF pF VDS = 15V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC nC nC VDS = 15V, ID = 15A nC ns ns VDD = 15V, VGS = 10V, ns RG = 3.3Ω, ID = 15A ns ns nC IF = 15A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse.


REF1112 DMN3009SFGQ DMN4030LK3Q


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)