Document
DMN3009SFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 30V
RDS(on) Max
5.5mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V
ID Max TC = +25°C
45A 30A
Features and Benefits
• Low On-Resistance • Low Input Capacitance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The DMN3009SFGQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
• Power Management Functions • DC-DC Converters • Batteries
Mechanical Data
• Case: PowerDI®3333-8 • Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See Diagram • Terminals: FinishMatte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (Approximate)
PowerDI3333-8
S Pin 1 S S G
D D D D
Bottom View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN3009SFGQ-7
DMN3009SFGQ-13
Case PowerDI3333-8 PowerDI3333-8
Packaging 2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
N09
PowerDI is a registered trademark of Diodes Incorporated.
DMN3009SFGQ
Document number: DS39775 Rev. 3 - 2
YYW W
N09 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 21 = 2021) WW = Week Code (01 to 53)
1 of 7 www.diodes.com
July 2021
© Diodes Incorporated
DMN3009SFGQ
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 6)
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH
TA = +25°C TA = +70°C TC = +25°C TC = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS IAS EAS
Value 30 ±20 16 13 45 35 80 20 33 55
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C Steady State
Symbol PD
RθJA PD RθJA RθJC TJ, TSTG
Value 0.9 0.6 137 2.1 1.4 59 7.8
-55 to +150
Unit V V A
A A A A mJ
Unit W
°C/W W
°C/W °C/W
°C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(th)
RDS(on)
VSD
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on)
tR tD(off)
tF tRR QRR
Min
30 — —
1 — — —
— — — — — — — — — — — — — —
Typ
— — —
1.4 4.0 4.9 0.68
2,000 315 248 2.2 20 42 4.7 7.4 3.9 4.1 31 14.6 15
6
Max
— 1 ±100
2.5 5.5 9 1
— — — — — — — — — — — — — —
Unit
Test Condition
V
VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 20A VGS = 4.5V, ID = 16A
V
VGS = 0V, IS = 1A
pF
pF pF
VDS = 15V, VGS = 0V, f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC nC VDS = 15V, ID = 15A
nC
ns
ns VDD = 15V, VGS = 10V, ns RG = 3.3Ω, ID = 15A
ns
ns nC IF = 15A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse.