Document
ZXTN19020DZQ
20V NPN HIGH GAIN TRANSISTOR IN SOT89
Description
This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.
Mechanical Data
Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish—Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208 Weight: 0.05 grams (Approximate)
Features
BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC = 7.5A High Continuous Current VCE(SAT) < 35mV @1A Low Equivalent On-Resistance; RCE(sat) = 21mΩ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4)
Applications
Emergency Lighting Circuits Motor Driving Camera Strobe Boost Converter CCFL Backlight Inverters MOSFET Gate Drivers LED Driving
C
SOT89 E
B
C
C
Top View
E
Device Symbol
B
Top View Pin-Out
Ordering Information (Notes 4 and 5)
Part Number ZXTN19020DZQTA
Compliance Automotive
Marking 1L8
Reel Size (inches) 7
Tape Width (mm) 12
Quantity per Reel 1000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, see http://www.diodes.com/products/packages.html.
Marking Information
SOT89
1L8 YWW
1L8 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2018) WW = Week code (01 – 53)
ZXTN19020DZQ
Document number: DS41121 Rev. 1 - 2
1 of 8 www.diodes.com
June 2018
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage (Forward Blocking) Collector-Emitter Voltage Emitter-Collector Voltage (Reverse Blocking) Emitter-Base Voltage Continuous Collector Current Base Current Peak Pulse Current
Symbol VCBO VCEX VCEO VECX VEBO IC IB ICM
ZXTN19020DZQ
Value
Unit
70
V
70
V
20
V
6
V
7
V
7.5
A
1
A
20
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 6)
Power Dissipation Linear Derating Factor
(Note 7)
(Note 8)
PD
(Note 9)
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Case Operating and Storage Temperature Range
(Note 10)
(Note 6) (Note 7) (Note 8) (Note 9) (Note 10)
RϴJA
RϴJL TJ, TSTG
Value 1.1
8.8
1.8
14.4
2.4 19.2 4.46 35.7 27.8 222 117 68 51 28
4.69
-55 to +150
Unit
W mW/°C
°C/W °C/W
°C
ESD Ratings (Note 11)
Characteristic Electrostatic Discharge—Human Body Model Electrostatic Discharge—Machine Model
Symbol ESD HBM ESD MM
Value 4000 400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the exposed collector pad on 15mm × 15mm 1oz copper that is on a single-sided 0.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
7. Same as Note 6 except the device is mounted on 25mm × 25mm 1oz copper. 8. Same as Note 6 except the device is mounted on 50mm × 50mm 1oz copper. 9. As (9) above at 5 < 5 seconds. 10. Junction to case (collector tab). Typical. 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN19020DZQ
Document number: DS41121 Rev. 1 - 2
2 of 8 www.diodes.com
June 2018
© Diodes Incorporated
ZXTN19020DZQ
Thermal Characteristics and Derating Information
I Collector Current (A)
C
V CE(sat)
10 Limited
1 DC 1s
100ms
100m Single Pulse T =25°C
amb
10ms 1ms 100µs
see note (8)
10m
100m
1
10
V Collector-Emitter Voltage (V) CE Safe Operating Area
I Collector Current (A)
C
1m
100µ 10µ
BV =20V BR(CEO)
Failure may occur in this region
1µ T =25°C
amb
BV =70V BR(CEX)
0
20
40
60
80
100
V Collector-Emitter Voltage (V) CE
Safe Operating Area
Max Power Dissipation (W)
2.4
see note (8)
2.0
see note (7) 1.6
1.2
see note (6)
0.8
0.4
0.0 0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
ZXTN19020DZQ
Document number: DS41121 Rev. 1 - 2
3 of 8 www.diodes.com
June 2018
© Diodes Incorporated
ZXTN19020DZQ
Thermal Characteristics and Derating Information
Thermal Resistance (°C/W)
120 T =25°C
amb
100 see note (6)
80
D=0.5 60
40 D=0.2
Single Pulse
20
D=0.05
D=0.1 0 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Transient Thermal Impedance
75
70
T =25°C amb
see note (7) 60
50 D=0.5
40
30 D=0.2
20
Single Puls.