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ZXMN6A08GQ Dataheets PDF



Part Number ZXMN6A08GQ
Manufacturers DIODES
Logo DIODES
Description 60V N-channel MOSFET
Datasheet ZXMN6A08GQ DatasheetZXMN6A08GQ Datasheet (PDF)

ZXMN6A08GQ 60V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 0.08Ω @ VGS = 10V 0.15Ω @ VGS = 4.5V ID Max TA = +25°C 5.3A 2.8A Features and Benefits  Low On-Resistance  Fast Switching Speed  Low Threshold  Low Gate Drive  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The ZXMN6A08GQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPA.

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ZXMN6A08GQ 60V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 0.08Ω @ VGS = 10V 0.15Ω @ VGS = 4.5V ID Max TA = +25°C 5.3A 2.8A Features and Benefits  Low On-Resistance  Fast Switching Speed  Low Threshold  Low Gate Drive  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The ZXMN6A08GQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  BLDC Motors  DC-DC Converters  Load Switch Mechanical Data  Case: SOT223  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208  Weight: 0.112 grams (Approximate) SOT223 (Type ZN) Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number ZXMN6A08GQTA ZXMN6A08GQTC Case SOT223 (Type ZN) SOT223 (Type ZN) Packaging 1000/Tape & Reel 4000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information SOT223 (Type ZN) ZXMN6A08 = Product Type Marking Code YWW = Date Code Marking Y = Last Digit of Year (ex: 0 = 2020) WW = Week Code (01 to 53) ZXMN6A08GQ Document number: DS40268 Rev. 2 - 2 1 of 7 www.diodes.com February 2020 © Diodes Incorporated ZXMN6A08GQ Maximum Ratings Characteristic Drain-Source Voltage Gate-Source Voltage TA = +25°C (Note 6) Continuous Drain Current @ VGS = 10V TA = +70°C (Note 6) Pulsed Drain Current (Note 7) TA = +25°C (Note 5) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7) Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor Power Dissipation at TA = +25°C (Note 6) Linear Derating Factor Operating and Storage Temperature Range Symbol VDSS VGSS ID IDM IS ISM PD PD TJ, TSTG Value 60 20 5.3 4.2 3.8 20 2.1 20 2 16 3.9 31 -55 to +150 Unit V V A A A A A A W mW/°C W mW/°C °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Junction to Ambient (Note 5) Junction to Ambient (Note 6) Symbol RθJA RθJA Value 62.5 32 Unit °C/W °C/W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Symbol Min Typ Max Unit Test Condition BVDSS 60 IDSS — IGSS — — — V VGS = 0V, ID = 250µA — 0.5 µA VDS = 60V, VGS = 0V — 100 nA VGS = ±20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (Note 9) Diode Forward Voltage VGS(TH) 1 — RDS(ON) — gfs — VSD — — — 0.06 0.08 0.08 0.15 6.6 — 0.88 1.2 V VDS = VGS, ID = 250µA Ω VGS = 10V, ID = 4.8A Ω VGS = 4.5V, ID = 4.2A S VDS = 15V, ID = 4.8A V TJ = +25°C, IS = 4A, VGS = 0V DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8) Gate Charge (Note 8) Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate Drain Charge (Note 8) Ciss — 459 — Coss — 44.2 — Crss — 24.1 — tD(ON) — 2.6 — tR — 2.1 — tD(OFF) — 12.3 — tF — 4.6 — QG — 4.0 — QG — 5.8 — QGS — 1.4 — QGD — 1.9 — pF pF VDS = 40V, VGS = 0V, f = 1MHz pF ns ns VDD = 30V, ID =1.5A ns RG ≅ 6.0Ω, VGS = 10V ns nC VDS = 30V, VGS = 5V ID = 1.4A nC nC VDS = 30V, VGS = 10V nC ID = 1.4A SOURCE-DRAIN DIODE Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9) tRR — 19.2 — ns TJ = +25°C, IS = 1.4A, QRR — 30.3 — nC di/dt = 100A/µs Notes: 5. For a device surface mounted on 25mm  25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t <= 10s. 7. Repetitive rating - 25mm  25mm FR-4 PCB, D = 0.02, pulse width 30.


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