Document
ZXMN6A08GQ
60V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
0.08Ω @ VGS = 10V 0.15Ω @ VGS = 4.5V
ID Max TA = +25°C
5.3A 2.8A
Features and Benefits
Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The ZXMN6A08GQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
BLDC Motors DC-DC Converters Load Switch
Mechanical Data
Case: SOT223 Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208 Weight: 0.112 grams (Approximate)
SOT223 (Type ZN)
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number ZXMN6A08GQTA ZXMN6A08GQTC
Case SOT223 (Type ZN) SOT223 (Type ZN)
Packaging 1000/Tape & Reel 4000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT223 (Type ZN)
ZXMN6A08 = Product Type Marking Code YWW = Date Code Marking Y = Last Digit of Year (ex: 0 = 2020) WW = Week Code (01 to 53)
ZXMN6A08GQ
Document number: DS40268 Rev. 2 - 2
1 of 7 www.diodes.com
February 2020
© Diodes Incorporated
ZXMN6A08GQ
Maximum Ratings
Characteristic
Drain-Source Voltage
Gate-Source Voltage
TA = +25°C (Note 6)
Continuous Drain Current @ VGS = 10V
TA = +70°C (Note 6)
Pulsed Drain Current (Note 7)
TA = +25°C (Note 5)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor
Power Dissipation at TA = +25°C (Note 6) Linear Derating Factor Operating and Storage Temperature Range
Symbol VDSS VGSS
ID
IDM IS ISM PD
PD TJ, TSTG
Value 60 20 5.3 4.2 3.8 20 2.1 20 2 16
3.9 31 -55 to +150
Unit V V A A A A A A W
mW/°C W
mW/°C °C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Junction to Ambient (Note 5) Junction to Ambient (Note 6)
Symbol RθJA RθJA
Value 62.5 32
Unit °C/W °C/W
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
ON CHARACTERISTICS
Symbol Min
Typ
Max
Unit
Test Condition
BVDSS
60
IDSS
—
IGSS
—
—
—
V VGS = 0V, ID = 250µA
—
0.5
µA VDS = 60V, VGS = 0V
—
100
nA VGS = ±20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (Note 9) Diode Forward Voltage
VGS(TH)
1
—
RDS(ON)
—
gfs
—
VSD
—
—
—
0.06 0.08
0.08 0.15
6.6
—
0.88
1.2
V
VDS = VGS, ID = 250µA
Ω VGS = 10V, ID = 4.8A
Ω VGS = 4.5V, ID = 4.2A
S VDS = 15V, ID = 4.8A
V
TJ = +25°C, IS = 4A,
VGS = 0V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8)
Gate Charge (Note 8)
Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate Drain Charge (Note 8)
Ciss
—
459
—
Coss
—
44.2
—
Crss
—
24.1
—
tD(ON)
—
2.6
—
tR
—
2.1
—
tD(OFF)
—
12.3
—
tF
—
4.6
—
QG
—
4.0
—
QG
—
5.8
—
QGS
—
1.4
—
QGD
—
1.9
—
pF
pF
VDS = 40V, VGS = 0V, f = 1MHz
pF
ns
ns VDD = 30V, ID =1.5A ns RG ≅ 6.0Ω, VGS = 10V
ns
nC VDS = 30V, VGS = 5V ID = 1.4A
nC nC VDS = 30V, VGS = 10V nC ID = 1.4A
SOURCE-DRAIN DIODE
Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9)
tRR
—
19.2
—
ns TJ = +25°C, IS = 1.4A,
QRR
—
30.3
—
nC di/dt = 100A/µs
Notes: 5. For a device surface mounted on 25mm 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t <= 10s.
7. Repetitive rating - 25mm 25mm FR-4 PCB, D = 0.02, pulse width 30.