Dual N-Channel MOSFET
DMN3401LVQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
0.4Ω @ VGS = 10V 0.7Ω @ VGS =...
Description
DMN3401LVQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V
ID Max TA = +25°C
1.1A 0.8A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Motor controls Power management functions DC-DC converters Backlighting
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DIODES™ DMN3401LVQ is suitable for automotive
applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Package: SOT563 Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate)
SOT563
ESD Protected
Top View
Internal Schematic
Top View Pin Out
Ordering Information (Note 4)
Part Number
DMN3401LVQ-7 DMN3401LVQ-13
Package
SOT563 SOT563
Marking
BG3 BG3
Reel Size (inches)
7 13
Tape Width (mm)
8 8
Packing
...
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