DMHT10H032LFJ

DMHT10H032LFJ 100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary BVDSS 100V RDS(ON) MAX 33mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V ID MAX TA = +25°C 6A 5A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Features  Thermally Efficient Package – Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications  Motor Control  DC-DC Converters  Power Management Mechanical Data  Case: V-DFN5045-12  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.056 grams (Approximate) V-DFN5045-12 (Type C) Top View Pin 1 S2 G2 S1/D2 D1 G1 D1 S2 D2/S1 D3/S4 D4 S3 S3 G3 S4/D3 D4 G4 Bottom View S3 7 Q3 Q2...