Document
DMN3020UTS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max
20mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V
ID max TC = +25°C
15A 14A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Battery Management Application Power Management Functions DC-DC Converters
TSSOP-8
Features and Benefits
Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSSOP-8 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Lead
Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.039 grams (Approximate)
D
ESD PROTECTED Pin1
Top View
S S S G
Bottom View
Pin Out
D
DG
D
D
Gate Protection Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN3020UTS-13
Case TSSOP-8
Packaging 2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
N3020U YY WW
= Manufacturer’s Marking N3020U = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 17 = 2017) WW = Week (01 to 53)
1
4
DMN3020UTS
Document number: DS39580 Rev. 2 - 2
1 of 7 www.diodes.com
July 2017
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 4.5V
Steady State
Steady State
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 7)
Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
TA = +25°C TA = +70°C TC = +25°C TC = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS ISM IAS
EAS
DMN3020UTS
Value
Unit
30
V
±12
V
6.8 5.4
A
15 12
A
A
A
A A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operati.