ZXMN3B04N8

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE Product Summary BVDSS 30V RDS(ON) 0.025Ω@VGS = 4.5V ID TA = +25°C 8.9A Description This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Applications  DC-DC Converters  Power Management Functions  Disconnect Switches  Motor Control Features  Low On-Resistance  Fast Switching Speed  Low Threshold  Low Gate Drive  Low Profile SO-8 Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.076 grams (Approximate) SO-8 Top View Top View Pin Out Configuration Equivalent Circuit Ordering Information (Note 4) Notes: Part Number ZXMN3B04N8TA ZXMN3B04N8TC Case SO-8 SO-8 Reel Size 7” 13” Tape Width 12mm 12mm Quantity Per Reel 500 Units 2500 Units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of ...