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ZXMP10A17E6 Dataheets PDF



Part Number ZXMP10A17E6
Manufacturers DIODES
Logo DIODES
Description 100V P-CHANNEL MOSFET
Datasheet ZXMP10A17E6 DatasheetZXMP10A17E6 Datasheet (PDF)

ADVANCE INFORMATION ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -100V RDS(on) 350mΩ @ VGS= -10V 450mΩ @ VGS= -6V ID TA = +25°C -1.6A -1.4A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Motor Control  DC-DC Converters  Power Management Functions  Uninterrupted Power Supply Features and Benefits  Fas.

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ADVANCE INFORMATION ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -100V RDS(on) 350mΩ @ VGS= -10V 450mΩ @ VGS= -6V ID TA = +25°C -1.6A -1.4A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Motor Control  DC-DC Converters  Power Management Functions  Uninterrupted Power Supply Features and Benefits  Fast Switching Speed  Low Gate Drive  Low Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT26  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See Diagram Below  Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e3  Weight: 0.018 grams (Approximate) SOT26 Top View D D D D G S Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number ZXMP10A17E6TA Compliance Standard Case SOT26 Packaging 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT26 1A17 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September) Date Code Key Year 2015 Code C 2016 D 2017 E Month Jan Feb Mar Code 1 2 3 ZXMP10A17E6 Document Number DS32027 Rev. 7 - 2 2018 F Apr 4 2019 G 2020 H 2021 I May Jun Jul 5 6 7 1 of 7 www.diodes.com 2022 J Aug 8 2023 K Sep 9 2024 L Oct O 2025 M 2026 N Nov Dec N D March 2015 © Diodes Incorporated ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current VGS = 10V Pulsed Drain Current VGS= 10V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (Note 6) TA = +70°C (Note 6) (Note 5) (Note 7) (Note 6) (Note 7) Symbol VDSS VGS ID IDM IS ISM ZXMP10A17E6 Value Unit -100 V 20 V -1.6 -1.3 A -1.3 -7.7 A -2.1 A -7.7 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) Power Dissipation Linear Derating Factor PD (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range (Note 5) (Note 6) RθJA TJ, TSTG Value 1.1 8.8 1.7 13.7 113 73 -55 to +150 Unit W mW/°C °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10) Symbol Min BVDSS IDSS IGSS VGS(th) RDS(ON) gfs VSD trr Qrr -100   -2      Ciss  Coss  Crss  Qg  Qg  Qgs  Qgd  tD(on)  tr  tD(off)  tf  Typ      2.8 -0.85 33 48 424 36.6 29.8 7.1 10.7 1.7 3.8 3 3.5 13.4 7.2 Max  -0.5 100 -4 0.35 0.45  -0.95              Unit Test Condition V ID = -250µA, VGS = 0V µA VDS = -100V, VGS = 0V nA VGS = 20V, VDS = 0V V ID = -250µA, VDS = VGS Ω VGS = -10V, ID = -1.4A VGS = -6V, ID = -1.2A S VDS = -15V, ID = -1.4A V IS = -1.7A, VGS = 0V ns nC IS = -1.5A, di/dt = 100A/µs pF pF VDS = -50V, VGS = 0V F = 1MHz pF nC VGS = -6V nC nC VGS = -10V nC VDS = -50V ID = -1.4A ns ns VDD = -50V, VGS = -10V ns ID = -1A, RG  6Ω ns Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t  5 sec.


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