Document
ADVANCE INFORMATION
ZXMP10A17E6
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -100V
RDS(on)
350mΩ @ VGS= -10V 450mΩ @ VGS= -6V
ID TA = +25°C
-1.6A
-1.4A
Description
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control DC-DC Converters Power Management Functions Uninterrupted Power Supply
Features and Benefits
Fast Switching Speed Low Gate Drive Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3 Weight: 0.018 grams (Approximate)
SOT26 Top View
D
D
D
D
G
S
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number ZXMP10A17E6TA
Compliance Standard
Case SOT26
Packaging 3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
1A17 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
2016 D
2017 E
Month
Jan
Feb
Mar
Code
1
2
3
ZXMP10A17E6
Document Number DS32027 Rev. 7 - 2
2018 F
Apr 4
2019 G
2020 H
2021 I
May
Jun
Jul
5
6
7
1 of 7 www.diodes.com
2022 J
Aug 8
2023 K
Sep 9
2024 L
Oct O
2025 M
2026 N
Nov
Dec
N
D
March 2015
© Diodes Incorporated
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS= 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 6) TA = +70°C (Note 6) (Note 5) (Note 7) (Note 6) (Note 7)
Symbol VDSS VGS
ID
IDM IS ISM
ZXMP10A17E6
Value
Unit
-100
V
20
V
-1.6
-1.3
A
-1.3
-7.7
A
-2.1
A
-7.7
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
Power Dissipation
Linear Derating Factor
PD
(Note 6)
Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
(Note 5) (Note 6)
RθJA TJ, TSTG
Value 1.1 8.8 1.7 13.7 113 73
-55 to +150
Unit W
mW/°C
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)
Symbol Min
BVDSS IDSS IGSS
VGS(th)
RDS(ON)
gfs VSD trr Qrr
-100
-2
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Typ
2.8 -0.85
33 48
424 36.6 29.8 7.1 10.7 1.7 3.8
3 3.5 13.4 7.2
Max
-0.5 100
-4 0.35 0.45 -0.95
Unit
Test Condition
V ID = -250µA, VGS = 0V µA VDS = -100V, VGS = 0V nA VGS = 20V, VDS = 0V
V
ID = -250µA, VDS = VGS
Ω
VGS = -10V, ID = -1.4A
VGS = -6V, ID = -1.2A
S VDS = -15V, ID = -1.4A
V IS = -1.7A, VGS = 0V
ns nC IS = -1.5A, di/dt = 100A/µs
pF pF VDS = -50V, VGS = 0V
F = 1MHz pF
nC VGS = -6V nC nC VGS = -10V nC
VDS = -50V ID = -1.4A
ns
ns VDD = -50V, VGS = -10V ns ID = -1A, RG 6Ω
ns
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t 5 sec.