Document
Green
DMTH10H032LPSWQ
100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 100V
RDS(ON) 32mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V
ID TC = +25°C
33A
26A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
Synchronous rectifiers Backlighting Power management functions DC-DC converters
Features
100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
High Conversion Efficiency Low Input Capacitance Fast Switching Speed Wettable Flank for Improved Optical Inspection Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DIODES™ DMTH10H032LPSWQ is suitable for
automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Package: PowerDI®5060-8 (SWP) (Type UX) Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish — Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate)
PowerDI5060-8 (SWP) (Type UX)
Pin1
S
D
S
D
S
D
G
D
Top View
Bottom View
Internal Schematic
Top View Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number DMTH10H032LPSWQ-13
Package PowerDI5060-8 (SWP) (Type UX)
Qty. 2,500
Packing Carrier
Tape & Reel
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
DMTH10H032LPSWQ
Document number: DS44569 Rev. 3 - 2
1 of 8 www.diodes.com
January 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Marking Information
DDDD
TH1032LSW
YY WW
S S SG
DMTH10H032LPSWQ
= Manufacturer’s Marking TH1032LSW = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 22 = 2022) WW = Week Code (01 to 53)
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current, VGS = 10V (Note 5)
TC = +25°C TC = +100°C
ID
33 23
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
132
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
ISM
Avalanche Current, L = 0.3mH (Note 6)
IAS
33
A
132
A
13
A
Avalanche Energy, L = 0.3mH (Note 6)
EAS
25.3
mJ
Thermal Characteristics
Characteristic Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range
TA = +25°C TC = +25°C
Symbol PD RθJA PD RθJC
TJ, TSTG
Value 3.4 44 68 2.2
-55 to +175
Notes:
5. Thermal resistance from junction to soldering point (on the exposed drain pad).
6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
Unit W
°C/W W
°C/W °C
DMTH10H032LPSWQ
Document number: DS44569 Rev. 3 - 2
2 of 8 www.diodes.com
January 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMTH10H032LPSWQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge
Symbol Min Typ
BVDSS
100
—
IDSS
—
—
IGSS
—
—
VGS(TH)
1.3
—
—
22
RDS(ON)
—
32
VSD
—
0.8
Ciss
—
683
Coss
—
165
Crss
—
6.9
Rg
—
1.2
Qg
—
6.3
Qg
—
11.9
Qgs
—
2.0
Qgd
—
3..