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DMTH10H032LPSWQ Dataheets PDF



Part Number DMTH10H032LPSWQ
Manufacturers DIODES
Logo DIODES
Description 100V N-CHANNEL MOSFET
Datasheet DMTH10H032LPSWQ DatasheetDMTH10H032LPSWQ Datasheet (PDF)

Green DMTH10H032LPSWQ 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) 32mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V ID TC = +25°C 33A 26A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  Synchronous rectifiers  Backlighting  Power management functions  DC-DC converters Features  100% Unclamped Inductive Swi.

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Green DMTH10H032LPSWQ 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) 32mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V ID TC = +25°C 33A 26A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  Synchronous rectifiers  Backlighting  Power management functions  DC-DC converters Features  100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low Input Capacitance  Fast Switching Speed  Wettable Flank for Improved Optical Inspection  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ DMTH10H032LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: PowerDI®5060-8 (SWP) (Type UX)  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish — Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208  Weight: 0.097 grams (Approximate) PowerDI5060-8 (SWP) (Type UX) Pin1 S D S D S D G D Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Notes: Part Number DMTH10H032LPSWQ-13 Package PowerDI5060-8 (SWP) (Type UX) Qty. 2,500 Packing Carrier Tape & Reel 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMTH10H032LPSWQ Document number: DS44569 Rev. 3 - 2 1 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. Marking Information DDDD TH1032LSW YY WW S S SG DMTH10H032LPSWQ = Manufacturer’s Marking TH1032LSW = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 22 = 2022) WW = Week Code (01 to 53) Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = 10V (Note 5) TC = +25°C TC = +100°C ID 33 23 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 132 A Maximum Continuous Body Diode Forward Current (Note 5) IS Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM Avalanche Current, L = 0.3mH (Note 6) IAS 33 A 132 A 13 A Avalanche Energy, L = 0.3mH (Note 6) EAS 25.3 mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range TA = +25°C TC = +25°C Symbol PD RθJA PD RθJC TJ, TSTG Value 3.4 44 68 2.2 -55 to +175 Notes: 5. Thermal resistance from junction to soldering point (on the exposed drain pad). 6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. Unit W °C/W W °C/W °C DMTH10H032LPSWQ Document number: DS44569 Rev. 3 - 2 2 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DMTH10H032LPSWQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Symbol Min Typ BVDSS 100 — IDSS — — IGSS — — VGS(TH) 1.3 — — 22 RDS(ON) — 32 VSD — 0.8 Ciss — 683 Coss — 165 Crss — 6.9 Rg — 1.2 Qg — 6.3 Qg — 11.9 Qgs — 2.0 Qgd — 3..


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