DMT10H009LSS

DMT10H009LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V ID Max TA = +25°C 13A 10A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  High Frequency Switching  Synchronous Rectification  DC-DC Converters Features and Benefits  High Conversion Efficiency  Low RDS(ON)—Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (Approximate) SO-8 Top View S D S D S D G D Top View Pin Configuration Equivalent Circuit Ordering Inf...