DMP3018SSS

Product Summary BVDSS -30V RDS(on) Max 12mΩ @ VGS = -10V 21mΩ @ VGS = -4.5V ID Max TA = +25°C -10.5A -8.0A DMP3018SSS P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Mechanical Data Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Below Terminals: Finish – Matte Tin Annealed Over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-8 D S D ESD PROTECTED Top View G Gate Protection Diode S Internal Sche...