DMN3190LDWQ

DMN3190LDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) (MAX) 190mΩ @ VGS = 10V 335mΩ @ VGS = 4.5V ID (MAX) TA = +25°C 1A 0.75A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor Control  DC-DC Converters  Load Switch Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT363  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3  Weight: 0.006 grams (Approximate) D1 D2 D2 G1 S1 ESD PROTECTED Top View G1 G2 Gate Protection Diode S1 Q1 N-Channel Gate Protection Diode S2 Q2 N-Channel S2 G2 D1 Top View Pin Out Ordering Information (Note 5) Notes: Part Number Case Packaging DMN3190LDWQ-7 SOT363 3000/Tape & Reel DMN3190LDWQ-13 SOT363 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) c...