Document
AADDVVAANNACCDEEVDDA IINNNCFFEOOIRRNMMFAAOTTRIIMOOANNTION
DMT3009LFVW
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS
RDS(ON) Max
11m @ VGS = 10V
30V 13m @ VGS = 4.5V
ID Max TC = +25°C
50A
45A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
Low RDS(ON) – Ensures On State Losses Are Minimized Small Form Factor Thermally Efficient Package Enables Higher
Density End Products Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (DMT3009LFVWQ)
Backlighting Power Management Functions DC-DC Converters
PowerDI3333-8 (SWP) (Type UX)
Mechanical Data
Case: PowerDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate)
D
D D D D
Top View
G S S S
Pin1
Bottom View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMT3009LFVW-7 DMT3009LFVW-13
Case PowerDI3333-8 (SWP) (Type UX) PowerDI3333-8 (SWP) (Type UX)
Packaging 2,000/Tape & Reel 3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SH9
PowerDI is a registered trademark of Diodes Incorporated.
DMT3009LFVW
Document number: DS39728 Rev. 5 - 2
YYWW
SH9= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 21 = 2021) WW = Week Code (01 to 53)
1 of 7 www.diodes.com
July 2021
© Diodes Incorporated
AADDVVAANNACCDEEVDDA IINNNCFFEOOIRRNMMFAAOTTRIIMOOANNTION
DMT3009LFVW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current VGS = 10V
TA = +25°C TA = +70°C
ID
12 10
A
TC = +25°C TC = +70°C
ID
50 37
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
3
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
90
A
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
ISM
90
A
Avalanche Current, L = 0.1mH
IAS
19
A
Avalanche Energy, L = 0.1mH
EAS
19
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 8) Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range
TA = +25°C Steady State
TC = +25°C Steady State
Symbol PD RJA PD RJC
TJ, TSTG
Value 2.3 55 35.7 3.5
-55 to +150
Unit W °C/W W °C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
30
IDSS
-
IGSS
-
VGS(TH)
1
-
RDS(ON)
-
-
VSD
-
Ciss
-
Coss
-
Crss
-
Rg
-
Qg
-
Qg
-
Qgs
-
Qgd
-
tD(ON)
-
tR
-
tD(OFF)
-
tF
-
tRR
-
QRR
-
Typ Max
-
-
-
1
-
±100
-
3
6.6
11
10.5
13
13.4
20
0.8
1.2
823
-
352
-
52
-
1.2
-
5.8
-
12
-
1.7
-
2.4
-
3.2
-
5.2
-
8.9
-
1.5
-
.