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DMT3009LFVW Dataheets PDF



Part Number DMT3009LFVW
Manufacturers DIODES
Logo DIODES
Description 30V N-Channel MOSFET
Datasheet DMT3009LFVW DatasheetDMT3009LFVW Datasheet (PDF)

AADDVVAANNACCDEEVDDA IINNNCFFEOOIRRNMMFAAOTTRIIMOOANNTION DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max 11m @ VGS = 10V 30V 13m @ VGS = 4.5V ID Max TC = +25°C 50A 45A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Low RDS(ON) – Ensures On State Losse.

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AADDVVAANNACCDEEVDDA IINNNCFFEOOIRRNMMFAAOTTRIIMOOANNTION DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max 11m @ VGS = 10V 30V 13m @ VGS = 4.5V ID Max TC = +25°C 50A 45A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Low RDS(ON) – Ensures On State Losses Are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product  Wettable Flank for Improved Optical Inspection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/  An Automotive-Compliant Part is Available Under Separate Datasheet (DMT3009LFVWQ)  Backlighting  Power Management Functions  DC-DC Converters PowerDI3333-8 (SWP) (Type UX) Mechanical Data  Case: PowerDI®3333-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.03 grams (Approximate) D D D D D Top View G S S S Pin1 Bottom View G S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMT3009LFVW-7 DMT3009LFVW-13 Case PowerDI3333-8 (SWP) (Type UX) PowerDI3333-8 (SWP) (Type UX) Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information SH9 PowerDI is a registered trademark of Diodes Incorporated. DMT3009LFVW Document number: DS39728 Rev. 5 - 2 YYWW SH9= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 21 = 2021) WW = Week Code (01 to 53) 1 of 7 www.diodes.com July 2021 © Diodes Incorporated AADDVVAANNACCDEEVDDA IINNNCFFEOOIRRNMMFAAOTTRIIMOOANNTION DMT3009LFVW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current VGS = 10V TA = +25°C TA = +70°C ID 12 10 A TC = +25°C TC = +70°C ID 50 37 A Maximum Continuous Body Diode Forward Current (Note 5) IS 3 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 90 A Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM 90 A Avalanche Current, L = 0.1mH IAS 19 A Avalanche Energy, L = 0.1mH EAS 19 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 8) Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range TA = +25°C Steady State TC = +25°C Steady State Symbol PD RJA PD RJC TJ, TSTG Value 2.3 55 35.7 3.5 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol Min BVDSS 30 IDSS - IGSS - VGS(TH) 1 - RDS(ON) - - VSD - Ciss - Coss - Crss - Rg - Qg - Qg - Qgs - Qgd - tD(ON) - tR - tD(OFF) - tF - tRR - QRR - Typ Max - - - 1 - ±100 - 3 6.6 11 10.5 13 13.4 20 0.8 1.2 823 - 352 - 52 - 1.2 - 5.8 - 12 - 1.7 - 2.4 - 3.2 - 5.2 - 8.9 - 1.5 - .


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