DMT3006LPB

DMT3006LPB DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type S) Product Summary Device BVDSS Q1 30V Q2 30V RDS(ON) 11.1mΩ @ VGS = 10V 14.0mΩ @ VGS = 4.5V 6.0mΩ @ VGS = 10V 10.0mΩ @ VGS = 4.5V ID TC = +25°C 35A 27A 50A 35A Features and Benefits  Thermally Efficient Package-Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Notebook Battery Power Management  DC-DC Converters  Loadswitch PowerDI5060-8 (Type S) Mechanical Data  Case: PowerDI®5060-8 (Type S)  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 3 per J-STD-020  Terminals: Finish – 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3  Terminal Connections: See Diagram Below  Weight: 0.097 grams (Approximate) Top View D1 D2 S2 S2 G1 G2 S2 G2 S1/D2 D1 S2 D1 G1 G2 D1 S2 D1 D1 D1 D1 S2 G1 S1 S2 Pin 1 Bottom View Q1 N-Channel MOSFET Q2 N-Channel MOSFET Top View Pin Configuration Ordering Information (Note 4) Notes: Pa...