DMT6017LDV

DMT6017LDV 65V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 65V RDS(ON) Max 22mΩ @ VGS = 10V 29mΩ @ VGS = 4.5V ID Max TC = +25°C 25.3A 22.1A Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application  Low RDS(ON) — Ensures On-State Losses are Minimized  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Wireless Charging  DC-DC Converters  Power Management Mechanical Data  Case: PowerDI®3333-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UXC) D1 D1 D2 D2 ESD PROTECTED Top View S1 G1 S2 G2 Pin 1 Bottom View Gate Protection Diode Gate Protection Diode Internal Schematic Ordering Information (Note 4) Notes: Part Number Case Packaging DMT6017LDV-7 PowerDI3333-8 (Type UX...