100V N-CHANNEL MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V
ID TC = +25°C
123A
108A
Green
DMTH10H010...
Description
Product Summary
BVDSS 100V
RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V
ID TC = +25°C
123A
108A
Green
DMTH10H010SPS
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Features
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures more reliable and robust end application
Low RDS(ON) – Minimizes On-State Losses Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This new generation N-Channel Enhancement Mode MOSFET is Case: PowerDI®5060-8
designed to minimize RDS(ON), yet maintain superior switching Case Material: Molded Plastic, “Green” Molding Compound.
performance. This device is ideal for use in notebook battery power
UL Flammability Classification Rating 94V-0
management and load switch.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Applications
Motor Control DC-DC Converters
Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.097 grams (Approximate)
Power Management
PowerDI5060-8
D
S
D
Pin1
S
D
Top View
Bottom View
G
S
Internal Schematic
S
D
G
D
Top View Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number DMTH10H010SPS-13
Case PowerDI5060-8
Packaging 2,500/Tape & Reel
1. EU Dir...
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