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DMTH10H010SPS

DIODES

100V N-CHANNEL MOSFET

Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V ID TC = +25°C 123A 108A Green DMTH10H010...


DIODES

DMTH10H010SPS

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Description
Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V ID TC = +25°C 123A 108A Green DMTH10H010SPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures more reliable and robust end application  Low RDS(ON) – Minimizes On-State Losses  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is  Case: PowerDI®5060-8 designed to minimize RDS(ON), yet maintain superior switching  Case Material: Molded Plastic, “Green” Molding Compound. performance. This device is ideal for use in notebook battery power UL Flammability Classification Rating 94V-0 management and load switch.  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram Below Applications  Motor Control  DC-DC Converters  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3  Weight: 0.097 grams (Approximate)  Power Management PowerDI5060-8 D S D Pin1 S D Top View Bottom View G S Internal Schematic S D G D Top View Pin Configuration Ordering Information (Note 4) Notes: Part Number DMTH10H010SPS-13 Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Dir...




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