DMN1017UCP3

Product Summary (Typ. @ VGS = 3.3V, TA = +25°C) VDSS 12V RDS(ON) 14.1mΩ Qg 10.5nC Qgd 4.1nC ID 7.5A Description This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Applications  DC-DC Converters  Battery Management  Load Switch DMN1017UCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Features  TR-MOS Technology with the Lowest RDS(ON): RDS(ON) = 14.1mΩ to Minimize On-State Losses  CSP with Footprint 1.0mm × 1.0mm  Height = 0.29mm for Low Profile  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: X3-DSN1010-3  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram Below  Terminal Finish: Matte Tin Annealed Over Copper Pillar  Solder Cap Material: SnAg (Ag: 2.0+/-0.5%)  Weight: 0.00062 grams (Approximate) Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN1017UCP3-7 Case X3-DSN1010-3 Packaging 3000/Tape & Reel 1. N...