Document
ADVANCED INFORMATION
YM
DMN1019USNQ
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 12V
RDS(ON) MAX
10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V
ID TA = +25°C
9.3A 8.5A 7.9A 6.9A 4.6A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
Load Switch DC-DC Converters Power Management Functions
SC59
Features
Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMN1019USNQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SC59 Case Material: Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Solderable per MIL-STD-202,
Method 208 e3 Terminal Connections: See Diagram Weight: 0.014 grams (Approximate)
D D
G
ESD PROTECTED
Top View
G
S
Top View Pin Configuration
Gate Protection Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN1019USNQ-7 DMN1019USNQ-13
Case SC59 SC59
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
N7 = Product Type Marking Code
N7
YM = Date Code Marking Y = Year ex: I = 2021
M = Month ex: 9 = September
Date Code Key Year Code
Month Code
2019 G
Jan 1
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2021 2022 2023 2024 2025 2026 2027 2028 2029 2030
…
I
J
K
L
M
N
O
P
R
S
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
2
3
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8
9
O
N
D
DMN1019USNQ
Document number: DS42299 Rev. 2 - 2
1 of 7 www.diodes.com
April 2021
© Diodes Incorporated
ADVANCED INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 6)
Steady State
t < 10s
TA = +25°C TA = +70°C TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS
DMN1019USNQ
Value
Unit
12
V
±8
V
9.3 7.4
A
11 8.8
A
70
A
2
A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
TA = +25°C Steady State
TA = +25°C Steady State
Symbol PD RθJA PD RθJA RθJC
TJ, TSTG
Value 0.68 160 1.2 96 18 -55 to +150
Unit W
°C/W W
°C/W °C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 8V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time
Symbol Min
BVDSS
12
IDSS
—
IGSS
—
VGS(TH) RDS(ON)
VSD
0.35 — — — — — —
Ciss
—
Coss
—
Crss
—
Rg
—
Qg
—
Qg
—
Qgs
—
Qgd
—
tD(ON)
—
tD(OFF)
—
tR
—
tF
—
Typ
— — —
0.53 7 8 10 14 28 0.8
2426 396 375 1.1 50.6 27.3 3.4 5.2 7.6 22.2 57.6 16.8
Max
— 1 ±2
0.8 10 12 14 18 41 1.2
— — — — — — — — — — — —
Unit
Test Condition
V VGS = 0V, ID = 250µA µA VDS = 12V, VGS = 0V µA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250µA VGS = 4.5V, ID = 9.7A VGS = 2.5V, ID = 9A
mΩ VGS = 1.8V, ID = 8.1A VGS = 1.5V, ID = 4.5A VGS = 1.2V, ID = 2.4A
V VGS = 0V, IS = 10A
pF pF VDS = 10V, VGS = 0V,
f = 1MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 4V, ID = 10A
ns ns VDD = 4V, VGEN = 5V, ID = 10A, ns RG = 1Ω, RL = 0.4Ω ns
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t < 10s RθJA.