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DMN1019USNQ Dataheets PDF



Part Number DMN1019USNQ
Manufacturers DIODES
Logo DIODES
Description 12V N-CHANNEL MOSFET
Datasheet DMN1019USNQ DatasheetDMN1019USNQ Datasheet (PDF)

ADVANCED INFORMATION YM DMN1019USNQ 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.6A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  Load Switch  DC-DC Converters  Power Management Functions .

  DMN1019USNQ   DMN1019USNQ


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ADVANCED INFORMATION YM DMN1019USNQ 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.6A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  Load Switch  DC-DC Converters  Power Management Functions SC59 Features  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN1019USNQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: SC59  Case Material: Molded Plastic. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Solderable per MIL-STD-202, Method 208 e3  Terminal Connections: See Diagram  Weight: 0.014 grams (Approximate) D D G ESD PROTECTED Top View G S Top View Pin Configuration Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN1019USNQ-7 DMN1019USNQ-13 Case SC59 SC59 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information N7 = Product Type Marking Code N7 YM = Date Code Marking Y = Year ex: I = 2021 M = Month ex: 9 = September Date Code Key Year Code Month Code 2019 G Jan 1 … 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 … I J K L M N O P R S Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2 3 4 5 6 7 8 9 O N D DMN1019USNQ Document number: DS42299 Rev. 2 - 2 1 of 7 www.diodes.com April 2021 © Diodes Incorporated ADVANCED INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) VGS = 4.5V Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 6) Steady State t < 10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IDM IS DMN1019USNQ Value Unit 12 V ±8 V 9.3 7.4 A 11 8.8 A 70 A 2 A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C Steady State TA = +25°C Steady State Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.68 160 1.2 96 18 -55 to +150 Unit W °C/W W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 8V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time Symbol Min BVDSS 12 IDSS — IGSS — VGS(TH) RDS(ON) VSD 0.35 — — — — — — Ciss — Coss — Crss — Rg — Qg — Qg — Qgs — Qgd — tD(ON) — tD(OFF) — tR — tF — Typ — — — 0.53 7 8 10 14 28 0.8 2426 396 375 1.1 50.6 27.3 3.4 5.2 7.6 22.2 57.6 16.8 Max — 1 ±2 0.8 10 12 14 18 41 1.2 — — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = 250µA µA VDS = 12V, VGS = 0V µA VGS = ±8V, VDS = 0V V VDS = VGS, ID = 250µA VGS = 4.5V, ID = 9.7A VGS = 2.5V, ID = 9A mΩ VGS = 1.8V, ID = 8.1A VGS = 1.5V, ID = 4.5A VGS = 1.2V, ID = 2.4A V VGS = 0V, IS = 10A pF pF VDS = 10V, VGS = 0V, f = 1MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 4V, ID = 10A ns ns VDD = 4V, VGEN = 5V, ID = 10A, ns RG = 1Ω, RL = 0.4Ω ns Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t < 10s RθJA.


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