N-CHANNEL MOSFET
DMN10H170SFGQ
N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
Features
BVDSS 100V
RDS(ON) max
122mΩ ...
Description
DMN10H170SFGQ
N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
Features
BVDSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A 2.7A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Motor Control Power Management Functions DC-DC Converters
100% Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application
Low RDS(ON) – Ensures on state losses are minimized Small form factor thermally efficient package enables higher
density end products Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Mechanical Data
Case: PowerDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate)
PowerDI3333-8
S Pin 1
S S
1
G
2
D
8 7
Top View
D D D D
Bottom View
3
6G
4
5
S
Top View
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMN10H170SFGQ-7
PowerDI33...
Similar Datasheet