SN54ABT861

D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation D ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) D High-Impedance State During Power Up and Power Down D Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 D High-Drive Outputs (–32-mA IOH, 64-mA IOL) D Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and Plastic (NT) and Ceramic (JT) DIPs description The ’ABT861 are 10-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing. These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB and OEBA) inputs. When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN54ABT861 is characterized for operation over the full military temperature range of –55°C to 125°C. The SN74ABT861 is characterized for operation from –40°C to 85°C. SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 SN54ABT861 . . . JT PACKAGE SN74ABT861 . . ....