SN54ABT863

D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation D Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C D High-Impedance State During Power Up and Power Down D High-Drive Outputs (–32-mA IOH, 64-mA IOL) D Latch-Up Performance Exceeds 500 mA Per JESD 17 D ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) D Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB) Packages, and Thin Shrink Small-Outline (PW), Ceramic Chip Carriers (FK), Plastic (NT), and Ceramic (JT) DIPs description SN54ABT863, SN74ABT863 9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS201E – FEBRUARY 1991 – REVISED JULY 1998 SN54ABT863 . . . JT PACKAGE SN74ABT863 . . . DB, DW, NT, OR PW PACKAGE (TOP VIEW) OEBA1 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 A8 9 A9 10 OEBA2 11 GND 12 24 VCC 23 B1 22 B2 21 B3 20 B4 19 B5 18 B6 17 B7 16 B8 15 B9 14 OEAB2 13 OEAB1 SN54ABT863 . . . FK PACKAGE (TOP VIEW) A2 A1 OEBA1 NC VCC B1 B2 The ’ABT863 devices are 9-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing. These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB and OEBA) inputs. 4 3 2 1 28 27 26 A3 5 25 B3 A4 6 24 B4 A5 7 21 B5 NC 8 22 NC A6 9 21 B6 A7 10 20 B7 A8 11...