DUAL N-CHANNEL MOSFET
Product Summary
Device BVDSS
NChannel
30V
RDS(ON) max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V
ID max TA = +25°C
0.8A
0.5...
Description
Product Summary
Device BVDSS
NChannel
30V
RDS(ON) max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V
ID max TA = +25°C
0.8A
0.57A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Motor Control Power Management Functions DC-DC Converters
SOT363
DMN3401LDWQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. “Green” Device (Note 3) The DMN3401LDWQ is suitable for automotive applications
requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.
Mechanical Data
Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: FinishMatte Tin Annealed over Copper Lead-Frame.
Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (Approximate)
D1
DD2 1
D1
G2
S2
G1
GG21
ESD PROTECTED
Top View
Gate Protection Diode
S1
Q1 N-Channel
Gate Protection Diode
SS2 1
Q2 N-Channel
S1
G1
D2
Top View Pin Out
Ordering Information (Note 4)
Notes:
Part Number DMN3401LDWQ-7 DMN3401LDWQ-13
Cas...
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