DMT6017LFDF

Product Summary BVDSS 65V RDS(ON) Max 18mΩ @ VGS = 10V 23mΩ @ VGS = 4.5V ID Max TA = +25°C 8.1A 7.1A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  DC-DC Converter  Adaptor Switch  Wireless Charging U-DFN2020-6 (Type F) DMT6017LFDF 65V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application  0.6mm Profile—Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3) Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish—NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.007 grams (Approximate) D ESD PROTECTED Top View Pin1 Bottom View Pin Out Bottom View G Gate Protection Diode S Internal Schematic Ordering Information (Note 4) Notes: Part Number DMT6017LFDF-7 DMT6017LFDF-13 Package U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) &...