Document
DMP31D7LQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) Max
0.9Ω @ VGS = -10V 1.7Ω @ VGS = -4.5V
ID TA = +25°C
-0.58A -0.42A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
DC-DC converters Power management functions
SOT23
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMP31D7LQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Package: SOT23 Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish—Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate)
D
D
G
ESD Pprotected Gate
Top View
G
S
Top View Internal Schematic
Gate Protection Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP31D7LQ-7 DMP31D7LQ-13
Package
SOT23 SOT23
Qty. 3000 10,000
Packing Carrier
Tape & Reel Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
AN5
Date Code Key Year Code
2022 J
2023 K
Month Code
Jan
Feb
1
2
DMP31D7LQ
Document number: DS43825 Rev. 2 - 2
2024 L
Mar 3
AN5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 9 = September)
2025 M
Apr 4
2026 N
2027 O
2028 P
May
Jun
Jul
5
6
7
1 of 7 www.diodes.com
2029 R
Aug 8
2030 S
Sep 9
2031 T
Oct O
2032 U
2033 V
Nov
Dec
N
D
March 2022
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady State
Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IS IDM
DMP31D7LQ
Value
Unit
-30
V
±20
V
-0.58 -0.46
A
-0.52
A
-2.5
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range
Steady State Steady State
Symbol PD RϴJA PD RϴJA
TJ, TSTG
Value 0.43 290 0.46 270 -55 to +150
Unit W
°C/W W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7)
Symbol Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
—
—
V
Zero Gate Voltage Drain Current
TJ = +25°C IDSS
—
—
-1
μA
Gate-Source Leakage
IGSS
—
—
±10
μA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8)
VGS(TH)
-1
—
-2.6
V
—
0.4
0.9
RDS(ON)
—
0.7
1.7
Ω
VSD
—
-0.8
-1.2
V
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Ciss
—
19
—
pF
Coss
—
16
—
pF
Crss
—
3
—
pF
Rg
—
729
—
Ω
Qg
—
0.36
—
nC
Qgs
—
0.1
—
nC
Qgd
—
0.1
—
nC
tD(ON)
—
30
—
ns
tR
—
74
—
ns
tD(OFF)
—
28
—
ns
tF
—
31
—
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250μA VDS = -24V, VGS = 0V VGS = ±16V, VDS = 0V
VDS = VGS, ID = -250μA VGS = -10V, ID = -0.42A VGS = -4.5V, ID = -0.2A VGS = 0V, IS = -0.23A.