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DMP31D7LQ Dataheets PDF



Part Number DMP31D7LQ
Manufacturers DIODES
Logo DIODES
Description P-CHANNEL MOSFET
Datasheet DMP31D7LQ DatasheetDMP31D7LQ Datasheet (PDF)

DMP31D7LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V RDS(ON) Max 0.9Ω @ VGS = -10V 1.7Ω @ VGS = -4.5V ID TA = +25°C -0.58A -0.42A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC converters  Power management functions SOT23 Features  Low On-Resistance  Low Input Capacitance  Fast Switching.

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DMP31D7LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V RDS(ON) Max 0.9Ω @ VGS = -10V 1.7Ω @ VGS = -4.5V ID TA = +25°C -0.58A -0.42A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC converters  Power management functions SOT23 Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMP31D7LQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: SOT23  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3  Terminals Connections: See Diagram Below  Weight: 0.009 grams (Approximate) D D G ESD Pprotected Gate Top View G S Top View Internal Schematic Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMP31D7LQ-7 DMP31D7LQ-13 Package SOT23 SOT23 Qty. 3000 10,000 Packing Carrier Tape & Reel Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information AN5 Date Code Key Year Code 2022 J 2023 K Month Code Jan Feb 1 2 DMP31D7LQ Document number: DS43825 Rev. 2 - 2 2024 L Mar 3 AN5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 9 = September) 2025 M Apr 4 2026 N 2027 O 2028 P May Jun Jul 5 6 7 1 of 7 www.diodes.com 2029 R Aug 8 2030 S Sep 9 2031 T Oct O 2032 U 2033 V Nov Dec N D March 2022 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = -4.5V Steady State Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) TA = +25°C TA = +70°C Symbol VDSS VGSS ID IS IDM DMP31D7LQ Value Unit -30 V ±20 V -0.58 -0.46 A -0.52 A -2.5 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Steady State Steady State Symbol PD RϴJA PD RϴJA TJ, TSTG Value 0.43 290 0.46 270 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS -30 — — V Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 μA Gate-Source Leakage IGSS — — ±10 μA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) VGS(TH) -1 — -2.6 V — 0.4 0.9 RDS(ON) — 0.7 1.7 Ω VSD — -0.8 -1.2 V Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Ciss — 19 — pF Coss — 16 — pF Crss — 3 — pF Rg — 729 — Ω Qg — 0.36 — nC Qgs — 0.1 — nC Qgd — 0.1 — nC tD(ON) — 30 — ns tR — 74 — ns tD(OFF) — 28 — ns tF — 31 — ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. Test Condition VGS = 0V, ID = -250μA VDS = -24V, VGS = 0V VGS = ±16V, VDS = 0V VDS = VGS, ID = -250μA VGS = -10V, ID = -0.42A VGS = -4.5V, ID = -0.2A VGS = 0V, IS = -0.23A.


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