DMT67M8LCG

DMT67M8LCG 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 5.7mΩ @ VGS = 10V 8.1mΩ @ VGS = 4.5V ID TC = +25°C 64.6A 54.2A Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.  Synchronous Rectifier  Power Management Functions  DC-DC Converters Mechanical Data  Case: V-DFN3333-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Below Diagram  Terminals: Finish—NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.027 grams (Approximate) V-DFN3333-8 (Type B) D ESD PROTECTED Top View Bottom View G Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMT67M8LCG-7 V-DFN3333-8 (Type B) 2,000/Tape & Reel DMT67M8LCG-13 V-DFN3333-8 (Type B) 3,000...