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IRFIZ44N Datasheet, Equivalent, Power MOSFET.Power MOSFET Power MOSFET |
| Part | IRFIZ44N |
|---|---|
| Description | Power MOSFET |
| Feature | Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free IRFIZ44NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.024 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wid. |
| Manufacture | Infineon |
| Datasheet |
| Part | IRFIZ44N |
|---|---|
| Description | Power MOSFET |
| Feature | Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free IRFIZ44NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.024 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wid. |
| Manufacture | Infineon |
| Datasheet |
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