2N7002H
60 V, N-channel Trench MOSFET
1 December 2021
Product data sheet
1. General description
N-channel enhancement ...
2N7002H
60 V, N-channel Trench MOSFET
1 December 2021
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tamb = 25 °C
-
-
60
V
VGS
gate-source voltage
-20 -
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1]
-
-
360 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 500 mA; Tj = 25 °C resistance
-
1
1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
2N7002H
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
3
1
2
SOT23
Graphic symbol
D G mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
2N7002H
SOT23
Description
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Version SOT23
7. Marking
Table 4. Marking codes Type number 2N7002H
[1] % = placeholder for manufacturing site code
Mar...