www.vishay.com
VS-62CTQ030-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 30 A
Base 2 common catho...
www.vishay.com
VS-62CTQ030-M3
Vishay Semiconductors
High Performance
Schottky Rectifier, 2 x 30 A
Base 2 common cathode
1 2 3
TO-220AB 3L
Anode
2
Anode
1 Common 3
cathode
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VR
30 V
VF at IF
0.44 V
IRM max.
350 mA at 125 °C
TJ max.
150 °C
EAS
13 mJ
Package
TO-220AB 3L
Circuit configuration
Common cathode
FEATURES
150 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC®-JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
This center tap
Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFRM IFSM VF TJ
Rectangular waveform (per device)
TC = 120 °C (per leg) tp = 5 μs sine 30 Apk, TJ = 125 °C Range
VALUES 60 30 60
1500 0.44 -65 to +150
UNITS A V
A
V °C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage Maximum working peak reverse voltage
VR VRWM
VS-62CTQ030-M3 30
UNITS V
ABSOLUTE MAXI...