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ZXT10P20DE6Q Dataheets PDF



Part Number ZXT10P20DE6Q
Manufacturers DIODES
Logo DIODES
Description 20V PNP LOW SATURATION SWITCHING TRANSISTOR
Datasheet ZXT10P20DE6Q DatasheetZXT10P20DE6Q Datasheet (PDF)

ZXT10P20DE6Q 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > -20V  IC = -2.5A Continuous Collector Current  ICM = -6A Peak Pulse Current  RCE(SAT) = 96mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage (-220mV Max @ -1A)  hFE Characterized up to -6A for High Current Gain Hold-Up  Totally Lead-Free & Fully RoHS Compliant (Notes 1 &.

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ZXT10P20DE6Q 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > -20V  IC = -2.5A Continuous Collector Current  ICM = -6A Peak Pulse Current  RCE(SAT) = 96mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage (-220mV Max @ -1A)  hFE Characterized up to -6A for High Current Gain Hold-Up  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) SOT26 Mechanical Data  Case: SOT26  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL- STD-202, Method 208  Weight: 0.015 grams (Approximate) Applications  DC-DC Converters  Power Management Functions  Power Switches  Motor Control C Top View B E Device Symbol C C C C B E Pin-Out Top View Ordering Information (Note 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel ZXT10P20DE6QTA Automotive 718 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information SOT26 718 YM 718 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: F = 2018) M or M = Month (ex: 9 = September) Date Code Key Year 2018 Code F 2019 G Month Code Jan Feb 1 2 2020 H Mar 3 2021 I Apr 4 2022 J May 5 2023 K Jun 6 2024 L 2025 M 2026 N Jul Aug Sep Oct 7 8 9 O 2027 O Nov N 2028 P Dec D ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 1 of 7 www.diodes.com June 2018 © Diodes Incorporated Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IB IC ICM ZXT10P20DE6Q Value Unit -20 V -20 V -7 V -500 mA -2.5 A -6 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Power Dissipation Linear Derating Factor (Note 6) PD (Note 7) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range (Note 6) (Note 7) (Note 8) RθJA RθJL TJ, TSTG Value 1.1 8.8 1.7 13.6 113 73 30.01 -55 to +150 Unit W mW/°C °C/W °C/W °C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol ESD HBM ESD MM Value 4,000 400 Unit JEDEC Class V 3A V C Notes: 6. For a device mounted with collector leads on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is measured at t  5secs. 8. Thermal resistance from junction to solder-point (at the end of the collector leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 2 of 7 www.diodes.com June 2018 © Diodes Incorporated Thermal Characteristics and Derating Information ZXT10P20DE6Q I Collector Current (A) C 10 1 DC 1s 100ms 10ms 100m 1ms 100s Single Pulse T =25oC A 100m 1 10 V Collector-Emitter Voltage (V) CE Safe Operating Area 120 100 80 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 1000μµ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (W) 1.2 1.0 0.8 0.6 0.4 0.2 0.00 20 40 60 80 100 120 140 160 Temperature (oC) Derating Curve Thermal Resistance (oC/W) ZXT10P20DE6Q Document number: DS41118 Rev. 1 - 2 3 of 7 www.diodes.com June 2018 © Diodes Incorporated ZXT10P20DE6Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter Cutoff Current Collector-Emitter Cutoff Current ON CHARACTERISTICS (Note 10) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation V.


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