DMTH10H009SPS | DIODES

Green DMTH10H009SPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) Max 8.9mΩ @ VGS = 10V ID TC = +25°C 88A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Applications.

DMTH10H009SPS | DIODES

100V N-CHANNEL MOSFET

Download DMTH10H009SPS Datasheet

Download DMTH10H009SPS Datasheet

Green DMTH10H009SPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary B.

Green DMTH10H009SPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) Max 8.9mΩ @ VGS = 10V ID TC = +25°C 88A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Applications  Motor Control  DC-DC Converters  Power Manage.

DMTH10H009SPSQ | DIODES

100V N-CHANNEL MOSFET

Download DMTH10H009SPSQ Datasheet

Download DMTH10H009SPSQ Datasheet

DMTH10H009SPSQ 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 10.

DMTH10H009SPSQ 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) Max 8.9mΩ @ VGS = 10V ID TC = +25°C 86A Features  Rated to +175C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Thermally Efficient Package-Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Min.