GAN190-650FBE Datasheet, Equivalent, GaN FET.


Part GAN190-650FBE
Description GaN FET
Feature DFN5060-5 GAN190-650FBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package 19 April 2023 Product data sheet 1. General description The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compli.
Manufacture nexperia
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GAN190-650FBE Datasheet



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