| Feature |
DFN5060-5
GAN190-650FBE
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN
5 mm x 6 mm package
19 April 2023
Product data sheet
1. General description
The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.
2. Features and benefits
• Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compli. |
