| Feature |
DFN8080-8
GAN190-650EBE
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN
8 mm x 8 mm package
19 April 2023
Product data sheet
1. General description
The GAN140-650EBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.
2. Features and benefits
• Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compli. |
